Part Number Hot Search : 
DS1976 STU6XXX DM9801E 01210 2304A DBI47 B3845AM 2322249
Product Description
Full Text Search

IRG7PK35UD1PBF - Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

IRG7PK35UD1PBF_8467033.PDF Datasheet


 Full text search : Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode


 Related Part Number
PART Description Maker
IRG4PC40FPBF IRG4PC40FPBF-15 INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLARTRANSISTOR Fast Speed IGBT
International Rectifier
IRG4PH40K 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRF[International Rectifier]
IRG4BC29K IRG4BC30K IRG4BC30 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
IRF[International Rectifier]
GT40G121 Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
TOSHIBA[Toshiba Semiconductor]
IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15 55 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR
   INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
MGW14N60ED-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGP4N60E-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGP7N60ED-D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
IRG4PC30FDPBF IRG4PC30FDPBF-15 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack 1GBT
International Rectifier
CM1200HA-50H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
CM600HA-28H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
MGP15N60U Insulated Gate Bipolar Transistor
MOTOROLA[Motorola, Inc]
 
 Related keyword From Full Text Search System
IRG7PK35UD1PBF informacion de IRG7PK35UD1PBF data IRG7PK35UD1PBF filetype:pdf IRG7PK35UD1PBF rectifier IRG7PK35UD1PBF Microelectronic
IRG7PK35UD1PBF Amplifiers IRG7PK35UD1PBF adc IRG7PK35UD1PBF for sale IRG7PK35UD1PBF Serial IRG7PK35UD1PBF international
 

 

Price & Availability of IRG7PK35UD1PBF

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.16052412986755